FDV301N MOSFET N-Ch Digital
♠ Sharaxaada Alaabta
| Sifada alaabta | Qiimaha sifada |
| Soo saaraha: | mid |
| Qaybta Alaabta: | MOSFET |
| RoHS: | Faahfaahin |
| Farsamada: | Si |
| Habka Koritaanka: | SMD/SMT |
| Xidhmada / Kiis: | SOT-23-3 |
| Transistor Polarity: | N-Channel |
| Tirada kanaalada: | 1 Channel |
| Vds - Korontada Burburinta Biyaha-Isha: | 25 V |
| Id - Biyo-bax joogto ah oo socda: | 220 mA |
| Rds On - Iska caabbinta Biyo-mareenka: | 5 Ohms |
| Vgs - Voltage-ka Ilaha: | - 8 V, + 8 V |
| Vgs th - Iridda-Ilaha Korantada: | 700 mV |
| Qg - Kharashka Albaabka: | 700 pc |
| Heerkulka Shaqaynta Ugu Yar: | - 55 C |
| Heerkulka shaqada ee ugu badan: | + 150 C |
| Pd - Quwadda Korontada: | 350mW |
| Qaabka kanaalka: | Kobcinta |
| Baakad | Gariir |
| Baakad | Jaro Cajalad |
| Baakad | MouseReel |
| Summada: | onsemi / Fairchild |
| Habaynta: | Hal |
| Waqtiga Dayrta: | 6 ns |
| Kor u qaadista - Min: | 0.2 S |
| Dhererka: | 1.2 mm |
| Dhererka: | 2.9 mm |
| Alaabta: | MOSFET Calaamad yar |
| Nooca Alaabta: | MOSFET |
| Waqtiga Kaca: | 6 ns |
| Taxane: | FDV301N |
| Tirada Xidhmada Warshada: | 3000 |
| Qayb-hoosaad: | MOSFET-yada |
| Nooca Transistor: | 1 N-Channel |
| Nooca: | FET |
| Waqtiga daahitaanka ee caadiga ah: | 3.5 ns |
| Waqtiga daahitaanka ee caadiga ah: | 3.2 ns |
| Ballaca: | 1.3 mm |
| Qaybta # Magacyada: | FDV301N_NL |
| Culayska Cutubka: | 0.000282 oz |
♠ Digital FET, N-Channel FDV301N, FDV301N-F169
N-Channel-kan heerka macquulka ah ee habka kor u qaadida saamaynta goobta transistor waxa lagu soo saaray iyada oo la adeegsanayo lahaanshaha onsemi, cufnaanta unugyada sare, tignoolajiyada DMOS.Habkan cufnaanta aadka u sarreeya waxa si gaar ah loogu talagalay si loo yareeyo iska caabbinta gobolka.Qalabkan waxa loo nashqadeeyay gaar ahaan codsiyada danab yar oo beddelka transistor-ka dhijitaalka ah.Maadaama aan loo baahnayn iska caabiyeyaasha eexda, kan N-channel FET wuxuu bedeli karaa dhowr transistor oo dhijitaal ah oo kala duwan, oo leh qiyamka caabiyaha eexda oo kala duwan.
• 25 V, 0.22 A joogto ah, 0.5 A ugu sarreysa
♦ RDS (daran) = 5 @ VGS = 2.7 V
♦ RDS (daran) = 4 @ VGS = 4.5 V
Shuruudaha Darawalka Gate ee Heerka aadka u hooseeya ee Ogolaanshaha Hawlgalka Tooska ah ee 3 V wareegyada.VGS(th) <1.06 V
Iridda-Source Zener ee Ruggedness ESD.> 6 kV Qaabka Jirka Aadanaha
• Ku Beddel Dhowr Transistar Dijital ah oo NPN ah Hal DMOS FET ah
• Qalabkani waa Pb-free iyo Halide Free
