FQU2N60CTU MOSFET 600V N-Channel Adv Q-FET C-Taxane
♠ Sharaxaada Alaabta
Sifada alaabta | Qiimaha sifada |
Soo saaraha: | mid |
Qaybta Alaabta: | MOSFET |
Farsamada: | Si |
Habka Koritaanka: | Dalool |
Xidhmada / Kiis: | TO-251-3 |
Transistor Polarity: | N-Channel |
Tirada kanaalada: | 1 Channel |
Vds - Korontada Burburinta Biyaha-Isha: | 600 V |
Id - Biyo-bax joogto ah oo socda: | 1.9 A |
Rds On - Iska caabbinta Biyo-mareenka: | 4.7 Ohms |
Vgs - Voltage-ka Ilaha: | - 30 V, + 30 V |
Vgs th - Iridda-Ilaha Korantada: | 2 V |
Qg - Kharashka Albaabka: | 12 nC |
Heerkulka Shaqaynta Ugu Yar: | - 55 C |
Heerkulka shaqada ee ugu badan: | + 150 C |
Pd - Quwadda Korontada: | 2.5 W |
Qaabka kanaalka: | Kobcinta |
Baakad | Tube |
Summada: | onsemi / Fairchild |
Habaynta: | Hal |
Waqtiga Dayrta: | 28 ns |
Kor u qaadista - Min: | 5 S |
Dhererka: | 6.3 mm |
Dhererka: | 6.8 mm |
Nooca Alaabta: | MOSFET |
Waqtiga Kaca: | 25 ns |
Taxane: | FQU2N60C |
Tirada Xidhmada Warshada: | 5040 |
Qayb-hoosaad: | MOSFET-yada |
Nooca Transistor: | 1 N-Channel |
Nooca: | MOSFET |
Waqtiga daahitaanka ee caadiga ah: | 24 ns |
Waqtiga daahitaanka ee caadiga ah: | 9 ns |
Ballaca: | 2.5 mm |
Culayska Cutubka: | 0.011993 oz |
MOSFET - N-Channel, QFET 600 V, 1.9 A, 4,7
Qaabka kobcinta kanaalka N-Channel MOSFET waxa lagu dhaqaajiyay iyada oo la adeegsanayo xariijimaha qorshaynta lahaanshaha ee onsemi iyo tignoolajiyada DMOS.Tignoolajiyadan MOSFET ee horumarsan waxa si gaar ah loogu habeeyey si loo dhimo iska caabbinta gobolka, iyo in la bixiyo waxqabad beddelaad heersare ah iyo tamar sare oo baraf ah.Qalabyadani waxay ku habboon yihiin sahayda korantada ee hab beddelan, hagaajinta wax-soo-saarka tamarta firfircoon (PFC), iyo ballasts-ka elektiroonigga ah.
• 1.9 A, 600 V, RDS (daran) = 4.7 (Max.) @ VGS = 10 V, aqoonsiga = 0.95 A
Kharashka Albaabka Hoose (Nooca. 8.5 nC)
• Crss hoose (Nooca. 4.3 pF)
• 100% baraf barafoobay ayaa la tijaabiyay
• Aaladahani waa bilaash waxayna u hoggaansamaan RoHS