IKW50N65ES5XKSA1 IGBT Transistor-ka warshadaha 14
♠ Sharaxaada Alaabta
| Sifada alaabta | Qiimaha sifada |
| Soo saaraha: | Infineon |
| Qaybta Alaabta: | Transistor-ka IGBT |
| Farsamada: | Si |
| Xidhmada / Kiis: | TO-247-3 |
| Habka Koritaanka: | Dalool |
| Habaynta: | Hal |
| Ururiyaha-Emitter Voltage VCEO Max: | 650 V |
| Korantada Korantada Soo-ururinta-Emitter: | 1.35 V |
| Korontada ugu badan ee Iridda Emitter: | 20 V |
| Soo ururiyaha Joogtada ah ee hadda jira 25 C: | 80 A |
| Pd - Quwadda Korontada: | 274 W |
| Heerkulka Shaqaynta Ugu Yar: | - 40 C |
| Heerkulka shaqada ee ugu badan: | + 175 C |
| Taxane: | JIDOOYINKA 5 S5 |
| Baakad | Tube |
| Summada: | Infineon Technologies |
| Diidmada Albaabka-Emitter Hadda: | 100 nA |
| Dhererka: | 20.7 mm |
| Dhererka: | 15.87 mm |
| Nooca Alaabta: | Transistor-ka IGBT |
| Tirada Xidhmada Warshada: | 240 |
| Qayb-hoosaad: | IGBTs |
| Magaca ganacsiga: | JOOJINTA |
| Ballaca: | 5.31 mm |
| Qaybta # Magacyada: | IKW50N65ES5 SP001319682 |
| Culayska Cutubka: | 0.213537 oz |
HighspeedS5 bixinta tignoolajiyada
•Aaladaha wax-ka-beddelka-xawaaraha sare-u-qaadista &-soo-dhaqashada
•VeryLowVCEsat,1.35Vatnominalcurrent
• Beddelka ciyaarta ee jiilkii hore ee IGBTs
• 650V Voltage burburay
• LowatechargeQG
•IGBT oo lagu baakadeeyay oo buuxaRAPID1fastantiparalleldiode
• Heerkulka ugu sarreeya175°C
• U qalmida codsiyada JEDECfortarget
• Hogaaminta xorta ah ee Pb;RoHS waafaqsan
• CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igt/
•Beddelayaasha resonant
• Sahayda awoodeed ee aan kala go'ayn
• Welding converters
• Beddelayaasha soo noqnoqda ee dhexda u dhexeeya
