IPD50N04S4-10 MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
♠ Sharaxaada Alaabta
Sifada alaabta | Qiimaha sifada |
Soo saaraha: | Infineon |
Qaybta Alaabta: | MOSFET |
RoHS: | Faahfaahin |
Farsamada: | Si |
Habka Koritaanka: | SMD/SMT |
Xidhmada/Kiiska: | TO-252-3 |
Transistor Polarity: | N-Channel |
Tirada kanaalada: | 1 Channel |
Vds - Korontada Burburinta Biyaha-Isha: | 40 V |
Id - Biyo-bax joogto ah oo socda: | 50 A |
Rds On - Iska caabbinta Biyo-mareenka: | 9.3 mohms |
Vgs - Voltage-ka Ilaha: | - 20 V, + 20 V |
Vgs th - Iridda-Ilaha Korantada: | 3 V |
Qg - Kharashka Albaabka: | 18.2 nC |
Heerkulka Shaqaynta Ugu Yar: | - 55 C |
Heerkulka shaqada ee ugu badan: | + 175 C |
Pd - Quwadda Korontada: | 41 W |
Qaabka kanaalka: | Kobcinta |
U qalmida: | AEC-Q101 |
Magaca ganacsiga: | OptiMOS |
Baakad | Gariir |
Baakad | Jaro Cajalad |
Summada: | Infineon Technologies |
Habaynta: | Hal |
Waqtiga Dayrta: | 5 ns |
Dhererka: | 2.3 mm |
Dhererka: | 6.5 mm |
Nooca Alaabta: | MOSFET |
Waqtiga Kaca: | 7 ns |
Taxane: | OptiMOS-T2 |
Tirada Xidhmada Warshada: | 2500 |
Qayb-hoosaad: | MOSFET-yada |
Nooca Transistor: | 1 N-Channel |
Waqtiga daahitaanka ee caadiga ah: | 4 ns |
Waqtiga daahitaanka ee caadiga ah: | 5 ns |
Ballaca: | 6.22 mm |
Qaybta # Magacyada: | IPD5N4S41XT SP000711466 IPD50N04S410ATMA1 |
Culayska Cutubka: | 330 mg |
• N-channel - Habka kobcinta
• AEC u qalma
• MSL1 ilaa 260°C dib u qulqulka ugu sarreeya
• 175°C heerkulka shaqada
• Badeecada Cagaaran (RoHS waafaqsan)
100% baraf baa la tijaabiyay