SAMSUNG waxa ay qorshaynaysaa in ay saddex jibaarto awoodeeda gunta hoose marka la gaadho 2027

Jeong Ki-tae, oo ah madaxweyne ku xigeenka horumarinta tignoolajiyada qaybta ganacsiga aasaasiga ah ee shirkadda, ayaa sheegay in Samsung Electronics ay si guul leh u soo saartay chip 3-nanometer ah oo ku salaysan tignoolajiyada GAA markii ugu horreysay adduunka sanadkan, iyada oo 45 boqolkiiba isticmaalka tamarta hoose, 23 boqolkiiba waxqabadka sare iyo 16 boqolkiiba ka yar marka loo eego 5-nanometer chip.

Samsung Electronics waxa kale oo ay qorshaynaysaa in aanay wax dadaal ah ku bixin si ay u balaadhiso awoodda wax soo saarka ee aasaaskeeda chip-ka, kaas oo ujeedadiisu tahay in ay saddex jibaarto awoodeeda wax-soo-saarka 2027. Si taas loo gaaro, chipmaker-ku waxa uu wadaa istiraatijiyad "qol-koowaad", taas oo ku lug leh dhisidda qol nadiif ah marka hore ka dibna u shaqeeya xarunta si dabacsanaan ah marka baahida suuqa soo baxdo.

Choi Si-young, oo madax ka ah qaybta aasaaska ganacsiga ee Samsung Electronics, ayaa yiri, "Waxaan ka shaqeyneynaa shan warshadood oo ku yaal Kuuriya iyo Mareykanka, waxaanan xaqiijinnay goobo lagu dhisayo in ka badan 10 warshadood."

IT House waxay ogaatay in Samsung Electronics ay qorshaynayso in ay bilawdo geedi socodkeeda jiilka labaad ee 3-nanometer sanadka 2023, bilawdo wax soo saarka tirada badan ee 2-nanometer sanadka 2025, iyo in ay bilawdo geedi socodka 1.4-nanometer sanadka 2027, khariidad tignoolajiyadeed oo Samsung markii ugu horaysay shaaca ka qaaday San Francisco Oct. 3 (waqtiga maxaliga ah).