SI1029X-T1-GE3 MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR
♠ Sharaxaada Alaabta
| Sifada alaabta | Qiimaha sifada |
| Soo saaraha: | Vishay |
| Qaybta Alaabta: | MOSFET |
| RoHS: | Faahfaahin |
| Farsamada: | Si |
| Habka Koritaanka: | SMD/SMT |
| Xidhmada/Kiiska: | SC-89-6 |
| Transistor Polarity: | N-Channel, P-Channel |
| Tirada kanaalada: | 2 Channel |
| Vds - Korontada Burburinta Biyaha-Isha: | 60 V |
| Id - Biyo-bax joogto ah oo socda: | 500 mA |
| Rds On - Iska caabbinta Biyo-mareenka: | 1.4 Ohms, 4 Ohms |
| Vgs - Voltage-ka Ilaha: | - 20 V, + 20 V |
| Vgs th - Iridda-Ilaha Korantada: | 1 V |
| Qg - Kharashka Albaabka: | 750 pC, 1.7 nC |
| Heerkulka Shaqaynta Ugu Yar: | - 55 C |
| Heerkulka shaqada ee ugu badan: | + 150 C |
| Pd - Quwadda Korontada: | 280mW |
| Qaabka kanaalka: | Kobcinta |
| Magaca ganacsiga: | TrenchFET |
| Baakad: | Gariir |
| Baakad: | Jaro Cajalad |
| Baakad: | MouseReel |
| Summada: | Vishay Semiconductors |
| Habaynta: | Laba |
| Kor u qaadista - Min: | 200 mS, 100 mS |
| Dhererka: | 0.6 mm |
| Dhererka: | 1.66 mm |
| Nooca Alaabta: | MOSFET |
| Taxane: | SI1 |
| Tirada Xidhmada Warshada: | 3000 |
| Qayb-hoosaad: | MOSFET-yada |
| Nooca Transistor: | 1 N-Channel, 1 P-Channel |
| Waqtiga daahitaanka ee caadiga ah: | 20 ns, 35 ns |
| Waqtiga daahitaanka ee caadiga ah: | 15 ns, 20 ns |
| Ballaca: | 1.2 mm |
| Qaybta # Magacyada: | SI1029X-GE3 |
| Culayska Cutubka: | 32 mg |
• Halogen-free Sida ku cad Qeexida IEC 61249-2-21
• TrenchFET® Power MOSFETs
• Raad aad u yar
• Beddelka Dhanka Sare
• Iska caabin Hoose:
N-Channel, 1.40 Ω
P-Channel, 4 Ω
• Xadka Hoose: ± 2 V (nooca.)
Xawaaraha beddelka degdega ah: 15 ns (nooc.)
• Iridda-Isha ESD la ilaaliyo: 2000 V
U Hogaansama Dardaaranka RoHS 2002/95/EC
• Beddel Transistor-ka Dijital ah, Heer-Shifter
• Hababka ku shaqeeya baytariyada
• Wareegyada Beddelka Korontada
