SI7119DN-T1-GE3 MOSFET -200V Vds 20V Vgs PowerPAK 1212-8
♠ Sharaxaada Alaabta
| Sifada alaabta | Qiimaha sifada |
| Soo saaraha: | Vishay |
| Qaybta Alaabta: | MOSFET |
| RoHS: | Faahfaahin |
| Farsamada: | Si |
| Habka Koritaanka: | SMD/SMT |
| Xidhmada/Kiiska: | PowerPAK-1212-8 |
| Transistor Polarity: | P-Channel |
| Tirada kanaalada: | 1 Channel |
| Vds - Korontada Burburinta Biyaha-Isha: | 200 V |
| Id - Biyo-bax joogto ah oo socda: | 3.8 A |
| Rds On - Iska caabbinta Biyo-mareenka: | 1.05 Ohms |
| Vgs - Voltage-ka Ilaha: | - 20 V, + 20 V |
| Vgs th - Iridda-Ilaha Korantada: | 2 V |
| Qg - Kharashka Albaabka: | 25 nC |
| Heerkulka Shaqaynta Ugu Yar: | - 50 C |
| Heerkulka shaqada ee ugu badan: | + 150 C |
| Pd - Quwadda Korontada: | 52 W |
| Qaabka kanaalka: | Kobcinta |
| Magaca ganacsiga: | TrenchFET |
| Baakad: | Gariir |
| Baakad: | Jaro Cajalad |
| Baakad: | MouseReel |
| Summada: | Vishay Semiconductors |
| Habaynta: | Keli |
| Waqtiga Dayrta: | 12 ns |
| Kor u qaadista - Min: | 4 S |
| Dhererka: | 1.04 mm |
| Dhererka: | 3.3 mm |
| Nooca Alaabta: | MOSFET |
| Waqtiga Kaca: | 11 ns |
| Taxane: | SI7 |
| Tirada Xidhmada Warshada: | 3000 |
| Qayb-hoosaad: | MOSFET-yada |
| Nooca Transistor: | 1 P-Channel |
| Waqtiga daahitaanka ee caadiga ah: | 27 ns |
| Waqtiga daahitaanka ee caadiga ah: | 9 ns |
| Ballaca: | 3.3 mm |
| Qaybta # Magacyada: | SI7119DN-GE3 |
| Culayska Cutubka: | 1 g |
Halogen-free Sida ku cad IEC 61249-2-21 La heli karo
• TrenchFET® Power MOSFET
Xirmada PowerPAK® Iska caabbinta kulaylka hooseeya oo leh cabbir yar iyo Profile hoose 1.07 mm
• 100 % UIS iyo Rg la tijaabiyey
• Isku-xidhka Firfircoon ee Qaybaha Korontada ee Dhexdhexaadka ah ee DC/DC
