SI9945BDY-T1-GE3 MOSFET 60V Vds 20V Vgs SO-8

Sharaxaad Gaaban:

Soo-saareyaasha: Vishay
Qaybta Alaabta:MOSFET
Xaashida Xogta:SI9945BDY-T1-GE3
Sharaxaad:MOSFET 2N-CH 60V 5.3A 8-SOIC
Heerka RoHS: Waa waafaqsan RoHS


Faahfaahinta Alaabta

Astaamaha

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Tags Product

♠ Sharaxaada Alaabta

Sifada alaabta Qiimaha sifada
Soo saaraha: Vishay
Qaybta Alaabta: MOSFET
RoHS: Faahfaahin
Farsamada: Si
Habka Koritaanka: SMD/SMT
Xidhmada/Kiiska: SOIC-8
Transistor Polarity: N-Channel
Tirada kanaalada: 2 Channel
Vds - Korontada Burburinta Biyaha-Isha: 60 V
Id - Biyo-bax joogto ah oo socda: 5.3 A
Rds On - Iska caabbinta Biyo-mareenka: 58 mohms
Vgs - Voltage-ka Ilaha: - 20 V, + 20 V
Vgs th - Iridda-Ilaha Korantada: 1 V
Qg - Kharashka Albaabka: 13 nC
Heerkulka Shaqaynta Ugu Yar: - 55 C
Heerkulka shaqada ee ugu badan: + 150 C
Pd - Quwadda Korontada: 3.1 W
Qaabka kanaalka: Kobcinta
Magaca ganacsiga: TrenchFET
Baakad Gariir
Baakad Jaro Cajalad
Baakad MouseReel
Summada: Vishay Semiconductors
Habaynta: Laba
Waqtiga Dayrta: 10 ns
Kor u qaadista - Min: 15 S
Nooca Alaabta: MOSFET
Waqtiga Kaca: 15 ns, 65 ns
Taxane: SI9
Tirada Xidhmada Warshada: 2500
Qayb-hoosaad: MOSFET-yada
Nooca Transistor: 2 N-Channel
Waqtiga daahitaanka ee caadiga ah: 10 ns, 15 ns
Waqtiga daahitaanka ee caadiga ah: 15 ns, 20 ns
Qaybta # Magacyada: SI9945BDY-GE3
Culayska Cutubka: 750 mg

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