VNS3NV04DPTR-E Darawalada Albaabka OMNIFET II VIPower 35mOhm 12A 40V
♠ Sharaxaada Alaabta
Sifada alaabta | Qiimaha sifada |
Soo saaraha: | STMicroelectronics |
Qaybta Alaabta: | Wadayaasha Albaabka |
RoHS: | Faahfaahin |
Alaabta: | MOSFET Gate Drivers |
Nooca: | Dhinac-hoose |
Habka Koritaanka: | SMD/SMT |
Xidhmada / Kiis: | SOIC-8 |
Tirada Darawalada: | 2 Darawal |
Tirada wax soo saarka: | 2 Wax soo saar |
Soo-saarka Hadda: | 5 A |
Korontada sahayda - ugu badnaan: | 24 V |
Waqtiga Kaca: | 250 ns |
Waqtiga Dayrta: | 250 ns |
Heerkulka Shaqaynta Ugu Yar: | - 40 C |
Heerkulka shaqada ee ugu badan: | + 150 C |
Taxane: | VNS3NV04DP-E |
U qalmida: | AEC-Q100 |
Baakad | Gariir |
Baakad | Jaro Cajalad |
Baakad | MouseReel |
Summada: | STMicroelectronics |
Qoyaanka xasaasiga ah: | Haa |
Soo-dejinta hadda: | 100 uA |
Nooca Alaabta: | Wadayaasha Albaabka |
Tirada Xidhmada Warshada: | 2500 |
Qayb-hoosaad: | PMIC - Maareynta Korontada ICs |
Farsamada: | Si |
Culayska Cutubka: | 0.005291 oz |
♠ OMNIFET II MOSFET si buuxda u ilaalisay
Qalabka VNS3NV04DP-E wuxuu ka kooban yahay laba chips monolithic (OMNIFET II) oo lagu hayo xirmo SO-8 caadiga ah.OMNIFET II waxaa loo qaabeeyey iyadoo la isticmaalayo STMicroelectronics™ VIPower™ M0-3 tignoolajiyada waxaana loogu talagalay in lagu beddelo MOSFET Power-ka caadiga ah ilaa codsiyada 50 kHz DC.
Xiritaanka kulaylka ee ku dhex jira, xaddidaadda tooska ah ee hadda jirta iyo xajinta korantada xad-dhaafka ah waxay ka ilaalisaa jajabka meelaha adag.
Jawaab celinta khaladka ah waxaa lagu ogaan karaa iyadoo la kormeerayo danab ku jira biinka gelinta
■ ECOPACK®: Leedh bilaash ah oo waafaqsan RoHS
■ Darajada Gawaarida: u hoggaansanaanta tilmaamaha AEC
■ Xaddidaadda toosan ee hadda jirta
■ Xiritaanka kulaylka
■ Ilaalinta wareegga gaaban
■ Isku dhejinta isku dhafan
■ Hadda hoose oo laga soo qaatay biinka gelinta
■ Falanqaynta ogaanshaha iyada oo loo marayo pin-gelinta
■ Ilaalinta ESD
■ Gelitaanka tooska ah ee albaabka awooda MOSFET (wadista analog)
■ La jaan qaada heerka MOSFET ee awoodda