VNS1NV04DPTR-E Wadayaasha Albaabka OMNIFET POWER MOSFET 40V 1.7 A
♠ Sharaxaada Alaabta
| Sifada alaabta | Qiimaha sifada |
| Soo saaraha: | STMicroelectronics |
| Qaybta Alaabta: | Wadayaasha Albaabka |
| Alaabta: | MOSFET Gate Drivers |
| Nooca: | Dhinac-hoose |
| Habka Koritaanka: | SMD/SMT |
| Xidhmada / Kiis: | SOIC-8 |
| Tirada Darawalada: | 2 Darawal |
| Tirada wax soo saarka: | 2 Wax soo saar |
| Soo-saarka Hadda: | 1.7 A |
| Korontada sahayda - ugu badnaan: | 24 V |
| Waqtiga Kaca: | 500 ns |
| Waqtiga Dayrta: | 600 ns |
| Heerkulka Shaqaynta Ugu Yar: | - 40 C |
| Heerkulka shaqada ee ugu badan: | + 150 C |
| Taxane: | VNS1NV04DP-E |
| U qalmida: | AEC-Q100 |
| Baakad | Gariir |
| Baakad | Jaro Cajalad |
| Baakad | MouseReel |
| Summada: | STMicroelectronics |
| Qoyaanka xasaasiga ah: | Haa |
| Soo-dejinta hadda: | 150 uA |
| Nooca Alaabta: | Wadayaasha Albaabka |
| Tirada Xidhmada Warshada: | 2500 |
| Qayb-hoosaad: | PMIC - Maareynta Korontada ICs |
| Farsamada: | Si |
| Culayska Cutubka: | 0.005291 oz |
♠ OMNIFET II MOSFET si buuxda u ilaalisay
VNS1NV04DP-E waa qalab ay sameeyeen laba chips monolithic OMNIFET II oo ku jira xirmo SO-8 caadiga ah.OMNIFET II waxaa loogu talagalay STMicroelectronics VIPower™ M0-3 tignoolajiyada: waxaa loogu talagalay in lagu beddelo MOSFET Power-ka caadiga ah ee DC ilaa codsiyada 50KHz.Lagu dhisay xidhitaanka kulaylka, xaddidaadda tooska ah ee hadda jirta iyo xajinta korontadu waxay ilaalisaa jajabka meelaha adag.
Jawaab celinta khaladka ah waxaa lagu ogaan karaa iyadoo la kormeerayo danabka ku jira biinka gelinta.
• Xaddidaad toosan oo hadda jirta
• Xiritaanka kulaylka
• Ilaalinta wareegga gaaban
• Isku dhejinta isku dhafan
• Hadda hooseeya oo laga soo qaatay biinka gelinta
• Ra'yi-celinta ogaanshaha iyada oo loo marayo pin-gelinta
Ilaalinta ESD
• Gelitaanka tooska ah ee albaabka mosfet korantada (wadista analog)
• La jaanqaadi kara mosfet tamarta caadiga ah
• Iyadoo la raacayo 2002/95/EC dardaaranka Yurub
